[DOWNLOAD] "Fujitsu Develops Gallium-Nitride HEMT Power Amplifier Featuring World's Highest Output in Millimeter-Wave W-Band; Extends Transmission Range by 6X" by JCN Newswires # Book PDF Kindle ePub Free

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eBook details

• Title: Fujitsu Develops Gallium-Nitride HEMT Power Amplifier Featuring World's Highest Output in Millimeter-Wave W-Band; Extends Transmission Range by 6X
• Author : JCN Newswires
• Release Date : January 05, 2010
• Genre: Business & Personal Finance,Books,
• Pages : * pages
• Size : 74 KB

Description

Tokyo, Oct 4, 2010 - (JCN Newswire) - Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a power amplifier using gallium nitride (GaN)(1) High Electron Mobility Transistors (HEMT)(2) that has achieved the world's highest output performance of 1.3W for wireless communications in the millimeter-wave W-band(3), for which widespread usage is expected in the future. The new amplifier will offer transmission output equivalent to approximately 16 times that of existing amplifiers that use gallium-arsenide (GaAs), thereby enabling W-band transmission ranges to be extended by approximately six times. Fujitsu's new GaN HEMT-based power amplifier will make high-capacity wireless communications possible in regions in which it is unfeasible to lay optical fiber cables, in addition to ensuring high-quality communications in rain and under other conditions where the millimeter-wave signal is known to attenuate.

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